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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1297 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC MAX 150 100 8 25 50 1.5 UNIT V V V A A A Open emitter Emitter-base voltage Collector current Collector current-peak Base current Open collector TC=25ae PT Total power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 100 W 3.0 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=30mA ;IB=0 IC=15A ;IB=30mA IC=15A ;IB=30mA VCB=100V; IE=0 VEB=5V; IC=0 IC=15A ; VCE=2V IC=25A ; VCE=2V 1000 250 MIN 100 2SD1297 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.5 2.2 10 5 30000 |I V V A mA Switching times ton tstg tf Fall time Turn-on time Storage time hFE-1 Classifications M 1000-3000 L 2000-5000 K 4000-10000 J 8000-30000 INC E SEM ANG H IC=15A; IB1=-IB2=30mA VCCO 60V;RL=4 OND IC TOR UC 1.0 |I 5.0 2.0 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1297 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
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